Fabrication of Bismuth Selenide Topological Insulating Samples

ORAL

Abstract

In this talk, I will discuss fabrication of nanometric topological insulator Bi$_{2}$Se$_{3}$ devices. Our group uses two fabrication methodologies: Epitaxial thin films and single crystal exfoliation. I will discuss the benefits and drawbacks of each methodology. I will also address the effects on device performance by various steps of the fabrication process.

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Authors

  • Lucas Orona

    MIT

  • H. Steinberg

    MIT, Department of Physics, MIT, Cambridge, USA

  • V. Fatemi

    MIT, Department of Physics, MIT, Department of Physics, MIT, Cambridge, USA

  • F. Katmis

    MIT, Francis Bitter Magnet Lab, Francis Bitter Magnet Lab, MIT, Cambridge, MA, MIT, Department of Physics, MIT, Cambridge, USA

  • Jagadeesh S. Moodera

    Massachusetts Institute of Technology, MIT, Francis Bitter Magnet Lab, Francis Bitter Magnet Lab and Physics Department, MIT, Cambridge, MA, MIT, Department of Physics, MIT, Cambridge, USA, Francis Bitter Magnet Lab., FBML and Physics Dept., MIT

  • Pablo Jarillo-Herrero

    MIT, Massachusetts Institute of Techology, Physics Department, MIT, Cambridge, MA, Department of Physics, MIT, Cambridge, USA, Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139 USA, Massachusetts Institute of Technology