Magnetic Element Doped Transparent Conducting In$_{2}$O$_{3 }$Thin Films for Spintronic Applications

Tremendous research efforts are underway to exploit the property of electron spin in spintronics. Spintronic devices critically depend on the availability of a specific materials system for spin injection, manipulation and detection. Transition metal (Cr, Fe, or Co) doped wide band gap oxide semiconductors possess these properties. ~Indium oxide (In$_{2}$O$_{3})$ is a wide band gap semiconductor with unique optical and electrical properties. Here, we investigate the effect of Cr, Fe, or Co doping on electrical and optical properties of In$_{2}$O$_{3}$ thin films. Thin films have been grown on sapphire and quartz substrates using pulse laser deposition method. Electrical and optical characteristics have been measured using UV-VIS spectroscopy and magneto-transport techniques. Optical transmittance and electrical parameters such as carrier concentration and carrier mobility vary with growth parameters such as growth temperature of the substrate and oxygen pressure of the chamber. These details will be discussed during this presentation.