Magnetism in Transition Element Doped In$_{2}$O$_{3}$ Dilute Magnetic Semiconductors

There is currently a tremendous research effort in the area of dilute magnetic semiconductors (DMS). It is proposed that a DMS exhibiting ferromagnetic properties at room temperature could be used in a new class of devices termed spintronics. Whereas standard electronics work on the principle of manipulation of charge properties of an electron, spintronics work on controlling electron spin. Indium oxide is a wide band gap semiconductor with unique optical and electrical properties. Defect concentrations such as transition metal doping and oxygen vacancies in In$_{2}$O$_{3}$ can tune the electrical/magnetic behavior from ferromagnetic metal-like to ferromagnetic semiconducting to paramagnetic insulating. Bulk materials of magnetic element (Fe, Co and Cr) doped In$_{2}$O$_{3 }$have been made using a standard solid state reaction method. Structural and magnetic properties have been measured using standard techniques. XRD analysis confirmed single phase In$_{2}$O$_{3 }$with no impurity phases due to addition of magnetic elements. Magnetization as a function of applied magnetic field and temperature were collected on all the samples using a SQUID magnetometer. Detailed structural and magnetic properties will be presented in this talk.