Quantum Hall effect on centimeter scale chemical vapor deposited graphene films

ORAL

Abstract

We report observations of well developed half integer quantum Hall effect on mono layer graphene films of 7 mm by 7 mm in size. The graphene films are grown by chemical vapor deposition on copper, then transferred to SiO$_{2}$/Si substrates, with typical carrier mobilities $\approx $4000 cm$^{2}$/Vs. The large size graphene with excellent quality and electronic homogeneity demonstrated in this work is promising for graphene-based quantum Hall resistance standards, and can also facilitate a wide range of experiments on quantum Hall physics of graphene and practical applications exploiting the exceptional properties of graphene.

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Authors

  • Tian Shen

    Department of Physics, Purdue University/National Institute of Standards and Technology

  • Wei Wu

    Center for Advanced Materials and ECE, University of Houston

  • Qingkai Yu

    Center for Advanced Materials and ECE, University of Houston

  • Curt Richter

    Semiconductor and Dimensional Metrology Div., NIST, Semiconductor and Dimensional Metrology Div, NIST Gaithersburg, MD, National Institute of Standards and Technology

  • Randolph Elmquist

    National Institute of Standards and Technology

  • David Newell

    National Institute of Standards and Technology

  • Yong Chen

    Purdue University, Physics department, Birck Nanotechnology Center, School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, Department of Physics and Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, Department of Physics, Purdue University