Nodal Gap of Heavily Under-doped Bi2201 Revealed by VUV Laser ARPES

ORAL

Abstract

We have carried out VUV laser-based angle-resolved photoemission (ARPES) on heavily under-doped $Bi_2(Sr_{2-x}La_x)CuO_{6+\delta}$ (abbreviated as La-Bi2201) samples with different dopings from antiferromagnetic insulators to superconductors. We find that, along the $(0,0)-(\pi,\pi)$ nodal direction, there is a gap opening that is strongly dependent on the hole doping level. The momentum and temperature dependence of the gap is investigated and the implication of the observations will be discussed.

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Authors

  • Yingying Peng

    • The Institute of Physics, Chinese Academy of Sciences

  • Jianqiao Meng

    • The Institute of Physics, Chinese Academy of Sciences

  • Changtian Chen

    • Technical Institute of Physics and Chemistry, Chinese Academy of Science

  • Zuyan Xu

    • Technical Institute of Physics and Chemistry, Chinese Academy of Science

  • Xingjiang Zhou

    • The Institute of Physics, Chinese Academy of Sciences