Optical Absorption Mechanisms in Sulfur Hyper-doped Silicon

ORAL

Abstract

Silicon that is doped with sulfur, a deep-level donor, to concentrations approaching 1{\%} at. demonstrates sub-band gap optical absorption, and has potential applications as an intermediate band solar cell material and a short-wavelength infrared (SWIR) photodetector. Understanding the nature of the absorption mechanism will aid in creating future devices with this exciting material. To elucidate the absorption mechanism, the reflectivity and absorption coefficient have been measured to photon energies down to 75 meV. We report on these new measurements as well as data fitting that give insight into absorption mechanism within these materials.

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Authors

  • Joseph Sullivan

    Massachusetts Institute of Technology, Department of Mechanical Engineering, Massachusetts Institute of Technology

  • Daniel Recht

    Harvard University, Harvard School of Engineering and Applied Sciences

  • Christie Simmons

    Department of Mechanical Engineering, Massachusetts Institute of Technology

  • Michael Aziz

    Harvard School of Engineering and Applied Sciences, Harvard University

  • Tonio Buonassisi

    Massachusetts Institute of Technology, Department of Mechanical Engineering, Massachusetts Institute of Technology