Local 2D-2D tunneling in high mobility electron systems

ORAL

Abstract

Many scanning probe techniques have been utilized in recent years to measure local properties of high mobility two-dimensional (2D) electron systems in GaAs. However, most techniques lack the ability to tunnel into the buried 2D system and measure local spectroscopic information. We report scanning gate measurements on a bilayer GaAs/AlGaAs heterostructure that allows for a local modulation of tunneling between two 2D electron layers. We call this technique Virtual Scanning Tunneling Microscopy (VSTM) [1,2] as the influence of the scanning gate is analogous to an STM tip, except at a GaAs/AlGaAs interface instead of a surface. We will discuss the spectroscopic capabilities of the technique, and show preliminary results of measurements on a high mobility 2D electron system.\newline [1] A. Sciambi, M. Pelliccione \textit{et al.}, Appl. Phys. Lett. \textbf{97}, 132103 (2010).\newline [2] A. Sciambi, M. Pelliccione \textit{et al.}, Phys. Rev. B \textbf{84}, 085301 (2011).

–

Authors

  • Matthew Pelliccione

    Stanford University

  • Adam Sciambi

    Stanford University

  • John Bartel

    Stanford University

  • David Goldhaber-Gordon

    Stanford University, Physics Department, Stanford University

  • Loren Pfeiffer

    Princeton University Department of Electrical Engineering, Princeton University, Princeton University, NJ

  • Ken West

    Princeton University

  • Mike Lilly

    Sandia National Laboratories, Sandia National Laboratory

  • Seth Bank

    University of Texas, Austin

  • Arthur Gossard

    Materials Department, University of California, Santa Barbara, California 93106, USA, Materials Department, University of California, Santa Barbara, University of California, Santa Barbara