Design and measurement of a silicon double quantum dot qubit with dispersive microwave readout

POSTER

Abstract

The electronic states of a semiconductor quantum dot are a promising candidate for quantum information processing. We describe a circuit QED qubit architecture in which a semiconductor qubit in silicon is capacitively coupled to a 6 GHz superconducting resonator. Silicon is an attractive material on account of the long electron spin lifetime. We discuss the design and operation of both the laterally defined double quantum dot qubit as well as the balanced coplanar stripline resonator.~~We focus in particular on the chip design and the specifics of the measurement setup, including both low and high frequency filtering. We also discuss the possibility of operating this device as a spin qubit by way of applying an inhomogeneous magnetic field.

Authors

  • Edward Henry

    UC Berkeley, QNL

  • Andrew Schmidt

    U.C. Berkeley, QNL, UC Berkeley, QNL

  • Mathew House

    University of California, Los Angeles, UCLA

  • Yao-Tseng Wang

    UC Berkeley

  • Cheuk Lo

    UC Berkeley

  • Hong Pan

    UCLA

  • Xin Xiao

    UCLA

  • Hanhan Li

    UC Berkeley

  • Loren Greenman

    UC Berkeley

  • Birgitta Whaley

    Department of Chemistry, University of California, Berkeley, California 94720, USA, University of California, Berkeley, UC Berkeley

  • Hongwen Jiang

    UCLA

  • Eli Yablonovitch

    UC Berkeley

  • Jeffrey Bokor

    Lawrence Berkeley National Laboratory, UC Berkeley

  • I. Siddiqi

    UC Berkeley, QNL, U.C. Berkeley, QNL, University of California at Berkeley