Design and measurement of a silicon double quantum dot qubit with dispersive microwave readout
POSTER
Abstract
The electronic states of a semiconductor quantum dot are a promising candidate for quantum information processing. We describe a circuit QED qubit architecture in which a semiconductor qubit in silicon is capacitively coupled to a 6 GHz superconducting resonator. Silicon is an attractive material on account of the long electron spin lifetime. We discuss the design and operation of both the laterally defined double quantum dot qubit as well as the balanced coplanar stripline resonator.~~We focus in particular on the chip design and the specifics of the measurement setup, including both low and high frequency filtering. We also discuss the possibility of operating this device as a spin qubit by way of applying an inhomogeneous magnetic field.
Authors
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Edward Henry
UC Berkeley, QNL
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Andrew Schmidt
U.C. Berkeley, QNL, UC Berkeley, QNL
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Mathew House
University of California, Los Angeles, UCLA
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Yao-Tseng Wang
UC Berkeley
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Cheuk Lo
UC Berkeley
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Hong Pan
UCLA
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Xin Xiao
UCLA
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Hanhan Li
UC Berkeley
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Loren Greenman
UC Berkeley
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Birgitta Whaley
Department of Chemistry, University of California, Berkeley, California 94720, USA, University of California, Berkeley, UC Berkeley
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Hongwen Jiang
UCLA
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Eli Yablonovitch
UC Berkeley
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Jeffrey Bokor
Lawrence Berkeley National Laboratory, UC Berkeley
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I. Siddiqi
UC Berkeley, QNL, U.C. Berkeley, QNL, University of California at Berkeley