Electronic Band Engineering of Epitaxial Graphene by Atomic Intercalation

ORAL

Abstract

Using calculations from first principles, we have investigated possible ways of engineering the electronic band structure of epitaxial graphene on SiC. In particular, intercalation of different atomic species, such as Hydrogen, Fluorine, Sodium, Germanium, Carbon and Silicon is shown to modify and tune the interface electronic properties and band alignments. Our results suggest that intercalation in graphene is quite different from that in graphite, and could provide a fundamentally new way to achieve electronic control in graphene electronics.

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Authors

  • Thushari Jayasekera

    Department of Physics, Southern Illinois University, Carbondale, IL, 62901

  • Andreas Sandin

    North Carolina State University, Department of Physics, North Carolina State University, Raleigh, NC 27695

  • Shu Xu

    North Carolina State University, Department of Physics, North Carolina State University, Raleigh, NC 27695

  • Virginia Wheeler

    U.S. Naval Research Laboratory, U.S. Naval Research Laboratory, Washington, DC 20375

  • D.K. Gaskill

    U.S. Naval Research Laboratory, Code 6880, Washington, DC 20375, U.S. Naval Research Laboratory, Washington, DC 20375

  • J.E. Rowe

    Department of Physics, North Carolina State University, North Carolina State University, Department of Physics, North Carolina State University, Raleigh, NC 27695

  • K.W. Kim

    Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695

  • Daniel B. Dougherty

    Department of Physics, North Carolina State University, North Carolina State University, Department of Physics, North Carolina State University, Raleigh, NC 27695

  • M. Buongiorno Nardelli

    North Carolina State University, Department of Physics, North Carolina State University, Department of Physics, North Carolina State University, Raleigh, NC 27695, NC State University, Raleigh and ORNL, Oak Ridge, TN