Invited Session: High k Dielectrics for High Carrier Mobility Channel Applications
INVITED · V20
Presentations
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Materials and Device Aspects of III-V 3D Transistors
COFFEE_KLATCH · Invited
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Authors
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Peide Ye
Purdue University
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Pushing the material limit and physics novelty in high $\kappa$'s/high carrier mobility semiconductors for post Si CMOS
COFFEE_KLATCH · Invited
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Authors
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M. Hong
Department of Physics and Graduate Institute of Applied Physics, National Taiwan University, Taipei, Taiwan 10617, Dept. Phys., Natl Taiwan Univ., Taipei, Taiwan
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Bonding principles of the Passivation Mechanism at III-V -- oxide Interfaces
COFFEE_KLATCH · Invited
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Authors
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John Robertson
Cambridge University
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Exploring Ge and III-V devices to scale CMOS beyond the Si roadmap
COFFEE_KLATCH · Invited
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Authors
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Marc Heyns
imec, KULeuven Materials Science department / IMEC
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