High mobility Single Layer Epitaxial Graphene on 4H-SiC (000-1)

Multi-layer Epitaxial Graphene on 4H-SiC (000-1) has demonstrated very high mobility up to$\sim $27,000 cm$^{2}$/Vs [1]. Recently single layer graphene grown by the Confinement Control Growth method [2] exhibits mobility up to $\sim $ 25,000cm$^{2}$/V$\cdot $s at 4K and 13,000 cm$^{2}$/V$\cdot $s at 300K with p=3 x 10$^{12}$ cm$^{-2}$ The relation between Raman G peak features (FWHM and position) and carrier density of Epitaxial Graphene on carbon face is revealed. Quantum Hall Effect [3] is observed both for p and n type carriers on top gated sample. This indicates that top gated single layer graphene can be produced on the Carbon face with high quality and high carrier mobility. \\[4pt] [1] Science \textbf{312}, 1191 (2006) \\[0pt] [2] PNAS \textbf{108 }(41) 16900 (2011) \\[0pt] [3] APL \textbf{95}, 223108 (2009)