Electronic and Transport Properties of Few-Layer MoS$_{2}$ Crystals

ORAL

Abstract

We investigate the electronic properties of few-layer MoS$_{2}$ flakes prepared by mechanical exfoliation. Field-effect transistors from MoS$_{2}$ flakes were fabricated and their properties were systematically characterized as a function of sample thickness. Scanning probe measurements are employed to characterize the interface between MoS$_{2}$ flakes and metal contacts. Transport properties of these devices and their correlation to electronic structure calculations are discussed.

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Authors

  • Doron Naveh

    Electrical \& Computer Engineering, Carnegie Mellon University, Pittsburgh, PA, United States

  • Ashwin Ramasubramaniam

    Mechanical \& Industrial Engineering, University of Massachusetts Amherst, Amherst, MA, United States, Mechanical \& Industrial Engineering. University of Massachusetts Amherst, University of Massachusetts Amherst

  • Elias Towe

    Electrical \& Computer Engineering, Carnegie Mellon University, Pittsburgh, PA, United States