Invited Session: Optical Processes in Nitrides and Other Wide-Band-Gap Semiconductors
INVITED · Z20
Presentations
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Electronic Properties of ZnO: Reconciling Multiple Techniques
COFFEE_KLATCH · Invited
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Authors
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Steve Durbin
University at Buffalo, The State University of New York, University at Buffalo
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Loss mechanisms in nitrides
COFFEE_KLATCH · Invited
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Authors
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C.G. Van de Walle
Materials Department, University of California, Santa Barbara, Materials Department, University of California Santa Barbara, University of California, Santa Barbara, Materials Department, University of California Santa Barbara, CA 93106-5050, Materials Department, University of California at Santa Barbara, Materials Department, University of California, Santa Barbara, California, CA
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Carrier localisation mechanisms and efficiency droop in nitride quantum wells
COFFEE_KLATCH · Invited
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Authors
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Colin Humphreys
University of Cambridge
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Photoluminescence as a tool for characterizing point defects in semiconductors
COFFEE_KLATCH · Invited
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Authors
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Michael Reshchikov
Physis Department, Virginia Commonwealh University
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Numerical Simulation of III-Nitrides Materials and Light Emitting Devices
COFFEE_KLATCH · Invited
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Authors
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Enrico Bellotti
Boston University
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