The Effect of Doping on the Metal-Semiconductor Transition in VO$_{2}$

ORAL

Abstract

Vanadium dioxide (VO$_{2})$ is a well-known correlated material that exhibits a metal-semiconductor transition at 340K, with several orders of magnitude change in the resistivity. In this study, we report the effect of Mn-doping and Al-doping, with different doping recipes; the films were deposited by Reactive Biased Target Ion Beam Deposition, and their single phase was confirmed by X-ray diffractometry. The different doping recipes had a very dramatic impact on the crystallinity of the vanadium dioxide films. It was found that using a lower frequency for the pulsed dc target bias was desirable for the improvement of the film quality. Both Al and Mn doping can enhance the transition; while the Al doped VO$_{2}$ also raises the transition temperature.

–

Authors

  • Salinporn Kittiwatanakul

    University of Virginia, Department of Physics, University of Virginia

  • Stuart Wolf

    University of Virginia, Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA 22904, University of Virginia, Dept. of Materials Science and Engineering, Department of Physics, University of Virginia

  • Jiwei Lu

    University of Virginia, Department of Materials Science and Engineering, University of Virginia