Current induced Metal-Semiconductor Transition in VO2 grown on Pt

ORAL

Abstract

Vanadium dioxide (VO$_{2}$) exhibits a metal-semiconductor transition at 340K; this transition can also be triggered by an electric field or direct current injection. In this study VO$_{2}$ was grown on 100 nm thick Pt bottom electrodes. The top Pt contacts were added for the transport measurements. The transport behavior indicated a reduced transition temperature. We have shown that the switching voltage for a Pt/VO2/Pt structure was as low as 0.3 V, and at this voltage we observed two orders of magnitude change in the resistance. XPS will be used to determine the valence state.

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Authors

  • Jiwei Lu

    University of Virginia, Department of Materials Science and Engineering, University of Virginia

  • Salinporn Kittiwatanakul

    University of Virginia, Department of Physics, University of Virginia

  • Stuart Wolf

    University of Virginia, Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA 22904, University of Virginia, Dept. of Materials Science and Engineering, Department of Physics, University of Virginia