Strong-Field Emission From High Aspect Ratio Si Emitter Arrays

We discuss photoelectron emission from an arrays of high aspect ratio, sharp Si emitters both experimentally and theoretically. The structures are prepared from highly doped single-crystal silicon having a pencil-like shape with end radii of curvature of around 10 nm. The tips were illuminated at a grazing incidence of roughly 84deg.with a laser pulse having a center wavelength of 800 nm, and a pulse duration of 35 fs from a regenerative amplifier system. Native oxide coated Si tips were characterized using a time of flight (TOF) electron energy spectrometer. An annealing process was observed, resulting in a red shift of the energy spectra along with an increased electron yield. Total current yield from samples having the oxide stripped were also studied. Apeak total emission of 0.68 pC/bunch, corresponding to around 1.5x10$^3$ electrons/tip/pulse was observed at a DC bias of 70 V . Both spectral and current characterization results are consistent with a stong-field photoemission process at the surface of the tip apex.