Focused ion beam lithographically patterned growth of vertically aligned ZnO nanorods arrays on GaN

Ordered ZnO nanorods were synthesized on GaN by using hydrothermal method via silicon dioxide template etched by focused ion beam nanolithography. Due to the nucleation site confinement, the as-grown ZnO nanorods were selectively budding inside the nanopattern. Scanning electron microscope image showed that the as-grown ZnO nanorods were highly ordered and exhibited hexagonal structure. This indicated the GaN substrate retained its crystalline orientation despite the destructive Focused ion beam lithography.