Weak Localization and Antilocalization in Topological Insulator Thin Films with Coherent Bulk-Surface Coupling

ORAL

Abstract

We evaluate quantum corrections to conductivity in an electrically gated thin film of a three-dimensional (3D) topological insulator (TI). We derive approximate analytical expressions for the low-field magnetoresistance as a function of bulk doping and bulk-surface tunneling rate. Our results reveal parameter regimes for both weak localization and weak antilocalization, and include diffusive Weyl semimetals as a special case.

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Authors

  • Ion Garate

    Yale University

  • Leonid Glazman

    Department of Physics, Yale University, Yale University, Applied Physics Department, Yale University, Department of Physics and Applied Physics, Yale University