Thermoelectric Performance of Hole-Doped Cu$_2$O

We present an analysis of the thermopower and related properties of hole-doped Cu$_2$O using first-principles calculations and Boltzmann transport theory. Our results show that hole-doped Cu$_2$O has a high thermopower of above 200 $\mu$V/K with doping levels as high as 5.5 $\times$ 10$^{20}$ cm$^{-3}$ at 500 K, mainly attributed to the heavy valence bands of Cu$_2$O. The current theory suggests that hole-doped Cu$_2$O could be a good thermoelectric material. Future experiments are thus suggested to explore its thermoelectric potential for practical use in cooling and power generation applications.