Valence band structure of Bi2Se3

ORAL

Abstract

Bi2Se3 is an interesting candidate for thermoelectric application because Se is a more abundant element than Te, which is commercially used in Bi2Te3-based Peltier coolers. However, intrinsic Se vacancies dominate in Bi2Se3 and dope the material n-type. Due to unfavourable conduction band structure, n-type Bi2Se3 does not have a high power factor. Recently, it has been calculated [1] that Bi2Se3 has a favourable valence band structure for thermoelectric application. In this presentation, high-quality p-type Bi2Se3 single crystals are prepared and Shubnikov de Haas measurement are carried out on them to characterize the band structure. Cross-sectional areas of Fermi surface are mapped out and compared with the theoretical calculation. Reference: [1] Phys. Rev. X 1, 021005 (2011)

–

Authors

  • Yi-Bin Gao

    Department of Mechanical and Aerospace Engineering, Ohio State University, Columbus, Ohio 43210

  • David Parker

    ORNL, Oak Ridge National Laboratory, Oak Ridge National Laboratory, 1 Bethel Valley Road, Oak Ridge, Tennessee 37831

  • Joseph P. Heremans

    The Ohio State University, Dept. of Mechanical Engineering and Dept. of Physics, Ohio State University, Columbus, OH 43210, Department of Mechanical and Aerospace Engineering, Department of Physics, Ohio State University, Columbus, Ohio 43210, Department of Mechanical Engineering, Department of Physics, Ohio State University, Department of Mechanical and Aerospace Engineering, Department of Physics, The Ohio State University, Columbus, OH