Large Seebeck Effect in CrSb$_{2}$ Single Crystals

ORAL

Abstract

CrSb$_{2}$ is a narrow gap semiconductor (E$_{\mathrm{g}} =$ 0.14 meV) that orders antiferromagnetically at T$_{\mathrm{N}} =$ 273 K. Resistivity, Hall effect, Seebeck coefficient, thermal conductivity, heat capacity, and magnetic susceptibility data are reported for CrSb$_{2}$ single crystals. In spite of some unusual features in electrical transport and Hall measurements below 100 K, only one phase transition occurs (T$_{\mathrm{N}})$ in the temperature range from 2 to 750 K. Many of the low temperature properties can be explained by the thermal depopulation of carriers from the conduction band into a low mobility impurity band about 16 meV below the conduction band edge. The Seebeck coefficient, S, is large and negative from 2 to 300 K, ranging from -70 $\mu $V/K at 300 K to -4500 $\mu $V/K at 18 K. The large magnitude of S at 18 K is likely due to phonon drag, with the large decrease in the magnitude of S below 18 K due to the thermal depopulation of the high mobility conduction band. The CrSb$_{2}$ Seebeck data are compared to some of the data reported for FeSb$_{2}$ and FeSi. This research was supported by the U. S. Department of Energy, Basic Energy Sciences, Materials Sciences and Engineering Division.

Authors

  • Brian Sales

    Oak Ridge National Laboratory, ORNL

  • Andrew May

    Oak Ridge National Laboratory

  • Michael McGuire

    Oak Ridge National Laboratory, ORNL, Materials Science and Technology Division, Oak Ridge National Laboratory

  • David Singh

    Oak Ridge National Laboratory, ORNL, Materials Science and Engineering Division Oak Ridge National Laboratory

  • David Mandrus

    University of Tennessee, Dept. Materials Science and Engineering, The University of Tennessee and Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge National Laboratory, The University of Tennessee/Oak Ridge National Laboratory, Materials Science and Engineering, University of Tennessee