Electrical transport and contact characteristics of single layer MoS$_{2}$ devices

MoS$_{2}$ and related metal dichalcogenides (MoSe$_{2}$, WS$_{2}$, WSe$_{2})$ are layered two dimensional materials with analogous structure to graphene. The monolayer MoS$_{2}$, where the Mo layer is sandwiched between two sulfur layers, is a semiconductor with a direct band gap (1.8 eV) at valley K and K' points. These materials are of significant technological interest for nanoscale electronic devices with high on off ratio, opto-electronics, and gas sensing. Also, due to giant spin-orbit coupling and spin splitting ($\sim$ 150 meV) in the valence band of monolayer MoS$_{2}$, monolayer MoS$_{2}$ has great potential for fascinating spin behavior, including the intrinsic spin Hall effect. Towards investigating spin transport in monolayer MoS$_{2}$, we have investigated ferromagnetic metal contacts on monolayer MoS$_{2}$. Through transport measurements, we are able to determine the Schottky barrier height between the Co contact electrodes and monolayer MoS$_{2}$ with characteristic temperature dependence.