Fabrication of Submicron Devices on the (011) Cleave Surface of a Cleaved-Edge-Overgrowth GaAs/AlGaAs Crystal

We describe the fabrication of submicron devices on the (011)cleave surface of a GaAs heterostructure crystal, in which this surface is extremely narrow. Special purpose devices are produced, which take advantage of the unique characteristics of Cleaved-Edge-Overgrowth. The successful fabrication relies on understanding the surface tension of the electron beam PMMA resist, the workable degree of variation in resist thickness, and on gluing the crystal onto a backing substrate to increase structural strength. We demonstrate a functional gate-controlled point contact constriction placed 9 um from one edge of the cleave surface. This technique may enable the study of fractional quantum Hall fluid in a novel structure.