Transport phenomena in SrVO$_3$ thin films

ORAL

Abstract

Bulk SrVO$_{3}$ (SVO) with a 3$d^{1}$ electronic configuration has been found to exhibit metallic and Pauli paramagnetic behavior. We have obtained epitaxial SVO films grown on various substrates (STO, SLAO, LSAT and LAO) using a pulsed electron-beam deposition (PED) technique. The film transport properties were found to be strongly dependent on the substrate. A 40 nm SVO film deposited on an STO substrate exhibited metallic behavior with the electrical resistivity following a T$^{2}$ law that corresponds to a Fermi liquid system, the resistance ratio R(300K)/R(2K) was $\sim$ 1.66. Hall measurements showed that the mobility increased slightly as the temperature was decreased. A small positive out-of-plane magnetoresistance was observed, it was only 0.045{\%} at 5 K and 7 Tesla. SVO films with the same thickness grown on SLAO, LSAT and LAO showed semiconducting behavior, the different transport properties in the SVO films could be attributed to the compressive film strain or the different film-substrate interfaces.

Authors

  • Man Gu

    University of Virginia

  • Stuart Wolf

    University of Virginia, Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA 22904, University of Virginia, Dept. of Materials Science and Engineering, Department of Physics, University of Virginia

  • Jiwei Lu

    University of Virginia, Department of Materials Science and Engineering, University of Virginia