Effect of direct current on giant negative magnetoresistance in two-dimensional electron systems

ORAL

Abstract

We report on a giant negative magnetoresistance in a 200 micron-wide Hall bar fabricated from GaAs/AlGaAs quantum well. Comparison with theory shows that magnetoresistance is much stronger than one could expect from either electron-electron interaction or classical memory effects due to sharp and smooth disorder. In this talk we systematically examine the effect of direct current and compare our findings with temperature dependence.

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Authors

  • Q. Shi

    • School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455, USA

  • P.D. Martin

    • School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455, USA

  • Q.A. Ebner

    • School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455, USA

  • M.A. Zudov

    • School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455, USA

  • L.N. Pfeiffer

    • Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA

  • K.W. West

    • Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA