Fabrication of Atomically Layered Material Heterostructures of WSe2 and hBN

We discuss fabrication methods for hBN-WSe2-hBN heterostructures designed to create high quality and high mobility monolayer WSe2 devices by encapsulating the WSe2 in a relatively clean and impurity-free environment.~ We use a release polymer to pick up hBN and WSe2 from a SiO2 substrate, and transfer the stack onto another pre-cleaned hBN flake. In this way the WSe2 channel is protected from resist residue by hBN above and below, and thus stays pristine and clean.~ Various fabrication strategies will be discussed, including a comparison of MMA and PPC as release polymers.~ We characterize the performance of these devices with electrical transport measurements.~