Gated Raman Spectroscopy of Twisted Bilayer Graphene

The interaction of charge carriers with lattice vibrations in graphene exhibits many intriguing physical phenomena. Raman spectroscopy is a powerful non-destructive technique to probe these interactions. In twisted bilayer graphene, the electronic band structure and phonon dispersion depend on the rotation angle between the layers. Here we present a systematic Raman spectroscopy study of twisted bilayer graphene, using a 532 nm laser, with controllable charge densities up to 2$\times$10$^{13}$cm$^{-2}$. The twist angle is first identified by the observation of a moire pattern in STM measurements. In the angle range between 5 and 8 degrees, the R$'$ peak softens and weakens with increasing charge density. Near 12 degrees, the G peak is enhanced due to the increased density of states in twisted bilayer graphene. However, the G peak area quickly decreases with increasing charge density. Lastly, we observed several unusual effects for the G peak for all angles from 2 to 10 degrees as a function of increasing charge density. We found that the G peak broadened, split and oscillated in position. All these results demonstrate that twisted bilayer graphene has rich optoelectronic properties.