MBE Growth of Si/MnGe Quantum Dot Superlattice with Curie Temperature beyond 400 K

ORAL

Abstract

The realization and application of spintronic devices would be boosted dramatically if room-temperature ferromagnetism could be integrated into semiconductor nanostructures, especially when compatible with the mature silicon technology. Here, a Si/MnGe superlattice with quantum dots well aligned in the vertical direction was successfully grown by molecular beam epitaxy. Magnetic measurements found that the superlattice structure exhibited a Curie temperature beyond 400 K, which is attributed to the presence of Mn-doped quantum dot nanostructures. Such unique Si/MnGe superlattice sets a new stage for strengthening ferromagnetism due to the enhanced hole-mediation by quantum confinement, which has the potential to realize the room-temperature spin filed-effect transistor devices with lower power dissipation and low variability.

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Authors

  • Tianxiao Nie

    University of California, Los Angeles, Univ of California - Los Angeles

  • Xufeng Kou

    University of California, Los Angeles, Univ of California - Los Angeles

  • Yabin Fan

    University of California, Los Angeles, Univ of California - Los Angeles

  • Jianshi Tang

    Univ of California - Los Angeles, Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, California, 90095, USA

  • Shengwei Lee

    National Central University

  • Murong Lang

    University of California, Los Angeles, Univ of California - Los Angeles

  • Chia-Pu Chu

    Univ of California - Los Angeles

  • Liang He

    Dept. of Elec. Eng., UCLA, Physics and Astronomy, University of North Carolina at Chapel Hill, University of California, Los Angeles, Univ of California - Los Angeles

  • LiTe Chang

    University of California, Los Angeles, Univ of California - Los Angeles

  • Kang L. Wang

    UCLA, Univ of California - Los Angeles