InAs 2DEGs:What's the g-factor?

Interest in spin-orbit effects in semiconductors has led us to study the electron g-factor in quasi-2DEG InAs samples. We have made magneto-transport and -photoresponse (PR) measurements on InAs QW structures in magnetic fields up to 10 T. THz cyclotron resonance (CR) is manifested in PR as a resonant envelope of the amplitude of quantum oscillations, which show clear spin-splitting (for lower mobility samples) down 4T, while direct R\textunderscore xx measurements show no spin-splitting up to 9T. R\textunderscore xx oscillations in a higher mobility sample show well-resolved spin-splittings over a range of fields as does the PR. We have simulated the data with a theoretical expression for 2DEG SdH oscillations (coupled with CR resonant carrier heating for the PR) and extracted g-factors from fits. We also used a different (commonly used) method, SdH oscillations vs. tilt angle of the field to extract g-factors from the angle at which the SdH frequency doubles. We find very large g-factors from fits to R\textunderscore xx and PR (14 -- 20), but g-factors 2-3 times smaller for these same samples from tilted field experiments (close to estimated band g-factors). These results are discussed in terms of exchange effects.