Interface engineered resistive switching in Ag/SrTiO$_{3}$/Nd$_{0.7}$Ca$_{0.3}$MnO$_{3}$/YBa$_{2}$Cu$_{3}$O$_{7}$ devices

Effects of buffer layer of SrTiO$_{3}$ (STO) on the room temperature resistive switching devices of Ag/Nd$_{0.7}$Ca$_{0.3}$MnO$_{3}$/YBa$_{2}$Cu$_{3}$O$_{7}$ (Ag/NCMO/YBCO) are investigated for the first time. It is found that the insertion of the STO buffer layer into the interface between Ag and NCMO greatly increases the electric-field-induced-resistance (EPIR) ratio. The device can be switched on-and-off from a higher to lower resistance state with a ratio of 253{\%} (405{\%}) at the pulsed voltage of $\pm$ 1.5 volt ($\pm$ 3.0 volt). The enhancement of EPIR ratio is attributed to the modification of the Ag/NCMO interface and the electric-pulse driven oxygen vacancy.