Growth and Characterization of Bi$_{2}$Te$_{3}$/Bi$_{2}$Se$_{3}$ Bilayers

Bi$_{2}$Te$_{3}$/Bi$_{2}$Se$_{3}$ bilayers were grown on Al$_{2}$O$_{3}$ (0001) substrates using molecular beam epitaxy. Bi$_{2}$Te$_{3}$ was grown at a stoichiometric ratio (Te/Bi) of 3:2 and Bi$_{2}$Se$_{3}$ was grown at stoichiometric ratio (Se/Bi) of 15:1. Reflection high energy electron diffraction and x-ray diffraction were used to confirm the epitaxial growth of these films. X-ray reflectivity was used to determine the thickness and roughness of these bilayers. The magnetotransport of these heterostructures was used to determine whether charge compensation can be achieved within the bulk of the material in order to enhance the properties of surface topological states. This work was supported by a Research Challenge Grant from the West Virginia Higher Education Policy Commission (HEPC.dsr.12.29) and the West Virginia University Shared Research Facilities.