Ferroelectric-resistive switching effect in BiFeO$_{3}$ nano-islands

Recent investigations into various ferroelectric materials have revealed remarkable polarization dependent electronic transport properties. These properties include a significant electroresistance changes in a switchable ferroelectric diode and ferroelectric tunnel junctions However, ferroelectric nanostructures such as nano-islands and nanowires have not yet been exploited for ferroelectric-resistive memories In this presentation, we explore the local charge conductions and their coupling with ferroelectric polarization in highly ordered ferroelectric BiFeO$_{3}$ nano-islands array by using conductive atomic force microscopy and piezoresponse force microscopy. We observed a switchable diode effect in BiFeO$_{3}$ nano-islands grown on SrRuO$_{3}$/SrTiO$_{3}$ substrate The ratio of resistive on/off had a value of $\sim$ 753, reading with a voltage as low as $\sim$ 0.5 V These results suggest that ferroelectric nanostructures as a potential candidate for ferroelectric--resistive memory elements can provide higher resistive on/off ratio, lower power consumption and large capacity.