Coupling ZnSe band spin states and 4H-SiC defect spin states across their interface

ORAL

Abstract

Point defects in silicon carbide (SiC) have emerged as a promising platform for quantum information processing and nanoscale sensing in a technologically-mature semiconductor. ZnSe is a promising candidate for semiconductor spintronic applications and has selection rules compatible with optical orientation of conduction electron spins. We combine pump-probe optical measurements with pulsed optically detected magnetic resonance (ODMR) sequences to investigate coupling between SiC defect spins and ZnSe conduction electron spins in ZnSe/4H-SiC heterostructures. Preparation of these structures by molecular beam epitaxy (MBE) and ion implantation is discussed in terms of interface optimization.

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Authors

  • Andrew L. Yeats

    Institute for Molecular Engineering, University of Chicago, Institute for Molecular Engineering, University of Chicago, Chicago, IL 60637

  • Anthony Richardella

    Physics Department, Pennsylvania State University, Dept. of Physics, Penn State University, Center for Nanoscale Science \& Dept. of Physics, Penn State University, University Park, PA 16802

  • Nitin Samarth

    Center for Nanoscale Science \& Dept. of Physics, Penn State University, University Park, PA 16802

  • D.D. Awschalom

    University of Chicago and UC Santa Barbara, Institute for Molecular Engineering, University of Chicago, Institute for Molecular Engineering, University of Chicago, Chicago, IL 60637, Institute for Molecular Engineering, University of Chicago, Chicago, IL 60652, Center for Spintronics and Quantum Computation, University of California, Santa Barbara, CA, 93106, University of Chicago - Institute for Molecular Engineering, Center for Spintronics and Quantum Computation, University of California, Santa Barbara, CA 93106, USA