Engineering Electronic Band Structure in Graphene Superlattices on Hexagonal Boron Nitride

When subjected to a periodic potential, the Dirac fermion spectrum in graphene undergoes dramatic transformation. This makes it possible to engineer electronic band structure in graphene through the formation of Moir\'e patterns on hexagonal Boron Nitride (hBN) substrate. By varying the angle between graphene and hBN substrate, we are able to produce graphene superlattices with different period. We further probe the electronic structure of the graphene superlattices through electronic transport measurements. Vastly different band structures are observed in graphene superlattices with different Moir\'e wavelength, which is in agreement with our theoretical model.