In situ tuning biexciton antibinding-binding transition and fine structure splitting through hydrostatic pressure in single InGaAs quantum dots
ORAL
Abstract
–
Authors
-
Hai Wei
Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, 230026, PR China
-
Xuefei Wu
Institute of Semiconductors, CAS, Beijing, 100083, PR China
-
Xiuming Dou
Institute of Semiconductors, CAS, Beijing, 100083, PR China
-
Kun Ding
Institute of Semiconductors, CAS, Beijing, 100083, PR China
-
Ying Yu
Institute of Semiconductors, CAS, Beijing, 100083, PR China, Chinese Academy of Sciences
-
Haiqiao Ni
Institute of Semiconductors, CAS, Beijing, 100083, PR China
-
Zhichuan Niu
Institute of Semiconductors, CAS, Beijing, 100083, PR China, Chinese Academy of Sciences
-
Yang Ji
Institute of Semiconductors, CAS, Beijing, 100083, PR China
-
Shushen Li
Institute of Semiconductors, CAS, Beijing, 100083, PR China
-
Desheng Jiang
Institute of Semiconductors, CAS, Beijing, 100083, PR China
-
Guang-can Guo
University of Science and Technology of China, Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, 230026, PR China
-
Lixin He
University of Science and Technology of China, Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, 230026, PR China, Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, People's Republic of China
-
Baoquan Sun
Institute of Semiconductors, CAS, Beijing, 100083, PR China