In situ tuning biexciton antibinding-binding transition and fine structure splitting through hydrostatic pressure in single InGaAs quantum dots

ORAL

Abstract

We demonstrate that the exciton and biexciton emission energies as well as exciton fine structure splitting (FSS) in single (In,Ga)As/GaAs quantum dots (QDs) can be efficiently tuned using hydrostatic pressure \textit{in situ} in an optical cryostat at up to 4.4 GPa. The maximum exciton emission energy shift is up to 380 meV, and the FSS is up to 150 $\mu$eV. We successfully produce a biexciton antibinding-binding transition in QDs, which is the key experimental condition that generates color- and polarization-indistinguishable photon pairs from the cascade of biexciton emissions and that generates entangled photons via a time-reordering scheme. We also perform the atomistic pseudopotential calculations on realistic (In,Ga)As/GaAs QDs to understand the physical mechanism underlying the hydrostatic pressure-induced effects.

Authors

  • Hai Wei

    Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, 230026, PR China

  • Xuefei Wu

    Institute of Semiconductors, CAS, Beijing, 100083, PR China

  • Xiuming Dou

    Institute of Semiconductors, CAS, Beijing, 100083, PR China

  • Kun Ding

    Institute of Semiconductors, CAS, Beijing, 100083, PR China

  • Ying Yu

    Institute of Semiconductors, CAS, Beijing, 100083, PR China, Chinese Academy of Sciences

  • Haiqiao Ni

    Institute of Semiconductors, CAS, Beijing, 100083, PR China

  • Zhichuan Niu

    Institute of Semiconductors, CAS, Beijing, 100083, PR China, Chinese Academy of Sciences

  • Yang Ji

    Institute of Semiconductors, CAS, Beijing, 100083, PR China

  • Shushen Li

    Institute of Semiconductors, CAS, Beijing, 100083, PR China

  • Desheng Jiang

    Institute of Semiconductors, CAS, Beijing, 100083, PR China

  • Guang-can Guo

    University of Science and Technology of China, Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, 230026, PR China

  • Lixin He

    University of Science and Technology of China, Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, 230026, PR China, Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui, 230026, People's Republic of China

  • Baoquan Sun

    Institute of Semiconductors, CAS, Beijing, 100083, PR China