Optimally doped hybridization gap semiconductor FeGa$_{3}$ as potential thermoelectric alloy*

FeGa$_{3}$, a hybridization gap semiconductor with a band gap of $\sim$ 0.5 eV can be a potential thermoelectric material if optimally doped. Due to the involvement of d-band in the transport, high Seebeck coefficient is a possibility. To achieve the optimum doping level, Mn, Co and Zn containing FeGa$_{3}$ alloys are being prepared either via the flux or solid state reaction method. Phase characterization will be carried out. Electrical and transport properties including resistivity, Seebeck and Hall coefficients and thermal conductivity will be measured over a wide temperature range of 80- 1000 K. These results will be presented and the potential of these compositions as thermoelectrics will be discussed.\\[4pt] *This work was supported as part of the Center for Revolutionary Materials for Solid State Energy Conversion, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Award Number DE-SC0001054.