Proximity effect in the 3D topological insulator Bi2Te3
ORAL
Abstract
Topological insulators (TI) are electronic materials with a bulk band gap that is supplemented by protected conducting states on their edges or surfaces in the 2- and 3- dimensional cases, respectively. This study reports the magnetotransport response observed in the 3D topological insulator Bi$_{2}$Te$_{3}$ with indium superconducting electrodes, and demonstrates two critical transitions in the magnetoresistive response with decreasing temperatures below T$=$ 3.4K. Here, the first transition is attributed to superconductivity in the In electrodes, as the second transition is attributed to the proximity effect in this hybrid TI/SC structure.
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Authors
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Zhuo Wang
Georgia State University
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Tianyu Ye
Georgia State University
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R.G. Mani
Georgia State University