Proximity effect in the 3D topological insulator Bi2Te3

ORAL

Abstract

Topological insulators (TI) are electronic materials with a bulk band gap that is supplemented by protected conducting states on their edges or surfaces in the 2- and 3- dimensional cases, respectively. This study reports the magnetotransport response observed in the 3D topological insulator Bi$_{2}$Te$_{3}$ with indium superconducting electrodes, and demonstrates two critical transitions in the magnetoresistive response with decreasing temperatures below T$=$ 3.4K. Here, the first transition is attributed to superconductivity in the In electrodes, as the second transition is attributed to the proximity effect in this hybrid TI/SC structure.

Authors

  • Zhuo Wang

    Georgia State University

  • Tianyu Ye

    Georgia State University

  • R.G. Mani

    Georgia State University