A stable path to ferromagnetic hydrogenated-graphene growth

ORAL

Abstract

Based upon first principle calculations, we present results that indicate the presence of a preferential site on one sublattice for hydrogen adsorption due to the screening effect of hexagonal boron nitride (h-BN). Our results show the effect of h-BN increases the hydrogen migration barrier on top of graphene. We propose a functional heterostructure as a TMR device, which is exploiting the screening effect caused by h-BN and the insulating properties of this exotic 2-D material. The density of states (DOS) calculations, with 1, 2 and 3 h-BN layers sandwiched in between two layers of graphone, show a half metallic state for these new heterostructures.

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Authors

  • Shayan Hemmatiyan

    Department of Physics, Texas A\&M University, College Station, TX 77843-4242, USA

  • Marco Polini

    NEST, Istituto Nanoscienze - CNR and Scuola Normale Superiore, I-56126 Pisa, Italy, NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, I-56126 Pisa, Italy

  • Allan MacDonald

    The University of Texas at Austin, Department of Physics, University of Texas at Austin, Austin, Texas 78712-1081, USA, Department of Physics, The University of Texas at Austin, Austin, TX, 78712, Department of Physics, University of Texas at Austin, University of Texas at Austin, University of Texas at Austin, Austin, Texas 78712, USA, UT Austin, Department of Physics, The University of Texas at Austin, Austin, Texas 78712, USA

  • Jairo Sinova

    Dept of Physics, Texas A\&M University, College Station, TX 77843-4242, USA- Institut f\"ur Physik, Johannes Gutenberg Universit\"at Mainz Staudinger, Texas A\&M University, College Station, Texas 77843, USA, Texas A\&M University, College Station, TX, USA