Crystal growth and characterization of $^{6}$LiInSe$_{2}$ neutron detector

$^{6}$LiInSe$_{2}$ is a promising thermal neutron semiconductor detector material. The performance of the detector is affected by the carrier mobility-lifetime product. Therefore, defects that function as carrier recombination center need to be identified. In the presentation, the crystals were grown from melt by the vertical Bridgman method, and characterized by photo-induced current transient spectroscopy (PICTS), low-temperature photoluminescence (LTPL) and detector performance measurement. PICTS measurements revealed electron-related defects located at 0.22, 0.36 and 0.55 eV and hole-related defects at 0.19, 0.30, and 0.73 eV. The defect values are consistent with those measured from LTPL donor-acceptor pair emissions. The carrier mobility-lifetime products were extracted from DC photocurrent and alpha-particle response measurements.