Electronic transport and device properties of monolayer CVD MoS$_{2}$

The electronic transport and device properties of monolayer molybdenum disulphide (MoS$_{2})$ grown by chemical vapor deposition (CVD) are studied in this work. We show that these devices have the potential to suppress short channel effects, be aggressively down-scaled and have high critical breakdown electric field. These properties make them a compelling alternative to organic and other thin film materials. However, our study reveals that the electronic properties of these devices are at present, severely limited by the presence of a significant amount of band tail trapping states. Through capacitance and ac conductance measurements, we systematically quantify the density-of-states and response time of these states. Due to the large amount of trapped charges, the measured effective mobility also leads to a large underestimation of the true band mobility and the potential of the material. These exponentially distributed states further limit the device's subthreshold slope to 200meV/dec, regardless of the temperature. Continual engineering efforts on improving the sample quality are needed for its potential applications in flexible electronics, high resolution displays, photo-detection and energy harvesting.