Thermal and photoconductivity at the La$_{\mathrm{1-x}}$Sr$_{\mathrm{x}}$CrO$_{3}$/SrTiO$_{3}$(001) interface

We have investigated the electronic and photophysical properties of interfaces between La$_{\mathrm{1-x}}$Sr$_{\mathrm{x}}$CrO$_{3}$ and SrTiO$_{3}$(001) as prepared by molecular beam epitaxy. LaCrO$_{3}$ is a III-III antiferromagnetic insulator whereas SrCrO$_{3}$ is a II-IV metallic oxide. Substituting Sr$^{2+}$ for La$^{3+}$ in LaCrO$_{3}$ effectively dopes holes into the top of valence band, reducing the band gap and the resistivity, and generating a $p$-type oxide semiconductor In contrast, SrTiO$_{3}$ is a wide-gap II-IV semiconductor that is readily made $n$-type by La doping. Therefore, the La$_{\mathrm{1-x}}$Sr$_{\mathrm{x}}$CrO$_{\mathrm{3}}$/SrTiO$_{3}$(001) system has much potential for interesting interface physics with regard to studying intrinsic conductivity via electronic reconstruction and electron-hole pair separation upon light irradiation. However, there are inherent physical and chemical complexities at these interfaces and within the bulk of the La$_{\mathrm{1-x}}$Sr$_{\mathrm{x}}$CrO$_{3}$ films which can have profound effects on the associated functional properties. In this talk, we present some of our most recent results from this ongoing investigation.\\[4pt] In collaboration with Kelvin Zhang, Du Yingge, Sushko Peter, Bowden Mark, Shutthanandan V, Pacific Northwest National Laboratory; and Shawn Sallis, Louis Piper, Binghamton University.