Investigation of InSb-In$_{2}$XTe (X$=$Ge {\&} Sn) pseudo binary alloys as potential thermoelectric materials*

Crystallizing in the zinc blende structure, InSb is known for promising thermoelectric properties with carrier mobility as high as $\sim$ 10$^{4}$ cm$^{2}$/V s at 300 K. However, the main drawback is its exceptionally high thermal conductivity $\sim$ 20 W/m K at 300 K. In this regard, pseudo binaries InSb-In$_{2}$XTe (X$=$Ge {\&} Sn) hold the promise of offering reduced thermal conductivity while maintaining the other thermoelectric properties intact. A series of InSb-In$_{2}$XTe type alloys has been synthesized. Thermal and electrical transport properties have been studied, and the results will be discussed with an emphasis on how the thermal conductivity is affected by the concentration of solute atoms. \\[4pt] *This work was supported as part of the Center for Revolutionary Materials for Solid State Energy Conversion, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Award Number DE-SC0001054.