Topological states of Sb thin films over doped graphene

Electronic properties of Sb thin films on pure, boron-doped, and nitrogen-doped graphene are investigated using density functional calculations. Various stacking configurations are taken into consideration. Sb films on boron-doped graphene have stronger interaction than those on pure or nitrogen-doped graphene. Dirac cones also occur in these systems and can serve as conduits for spin-polarized conduction. The results are useful for applications in topological transport and spintronics.