Electrolyte Gating of SrTiO$_{3}$ Nanostructures

ORAL

Abstract

We report low-temperature transport measurements of a two-dimensional electron system (2DES) at the surface of Strontium Titanate. We use electrolyte gating to create the 2DES, and nanopatterning techniques to create gate-tunable submicron constrictions. We observe universal conductance fluctuations, from which we extract an electron dephasing rate linear in temperature, characteristic of electron-electron interaction in a disordered conductor. Furthermore, the dephasing rate has a temperature-independent offset, suggestive of unscreened local magnetic moments in the sample. Finally, we demonstrate that protecting the Strontium Titanate with a thin layer of hexagonal Boron Nitride allows us to create a 2DES with dramatically increased mobility, while also preventing surface electrochemistry.

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Authors

  • Sam Stanwyck

    Department of Applied Physics, Stanford University, Stanford, CA, 94305, USA

  • Patrick Gallagher

    Department of Physics, Stanford University, Stanford, California 94305, USA, Department of Physics, Stanford University, Stanford, CA, 94305, USA

  • Menyoung Lee

    Stanford University, Department of Physics, Stanford University, Stanford, CA, 94305, USA

  • David Goldhaber-Gordon

    Stanford University, Stanford Univ, Department of Physics, Stanford University, Stanford, CA, 94305, USA