Quantum Hall Effect (QHE) in ABA stacked trilayer graphene

ORAL

Abstract

Since its experimental discovery in 2004 graphene was under extensive research as a promising counterpart of silicon for the future electronics application as well as an excellent model of 2 dimensional electron gas. Here we investigate quantum Hall effect in ABA trilayer graphene -- hexagonal boron nitride heterostructures. Landau Levels (LL) crossings at low filling factors were observed and explored at different external electric fields. The formation of the QH states as an interaction of monlayer-like and bilayer-like branches will be discussed. We will present the most recent experimental results.

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Authors

  • Petr Stepanov

    University of California, Riverside

  • Yafis Barlas

    Department of Physics and Astronomy, University of California, Riverside, University of California, Riverside

  • Nathaniel Gillgren

    University of California, Riverside, University of California Riverside

  • Takashi Taniguchi

    National Institute of Materials Science, Japan, National Institute for Materials Science, National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan

  • Chun Ning Lau

    University of California, Riverside, University of California - Riverside