Electrical assessments of $^{28}$Si enriched and deposited \textit{in situ} to \textless 1 ppm $^{29}$Si

We are enriching $^{28}$Si to better than 99.9999{\%}, depositing epitaxial films, and measuring materials properties to improve our deposition process so that our enriched films can be used to fabricate quantum devices. Recent reports of spin-echo measurements in donor ensembles and single spins have both demonstrated spectacular coherence time and line width improvements due to enriched $^{28}$Si. In order to realize the benefits of our enrichment, the electrical properties of our films need to be similar quality to commercial wafers. Therefore, we are using C-V, g-V, Hall and other techniques commonly used for quantifying defect densities, mobility, carrier density, etc. to benchmark the viability of using our enriched films for quantum device fabrication.