Magnetotransport in graphene and other two dimensional materials

ORAL

Abstract

In this work we address theoretically the classical and quantum magnetotransport in graphene [1] and other two dimensional materials [2].~ We demonstrate that at room temperature, the largest contribution to the magnetoresistance arises from the disorder-induced carrier density inhomogeneity that gives a quadratic magnetoresistance at low magnetic fields and linear magnetoresistance at larger fields.~ At lower temperatures, quantum phase-coherent effects can be observed in the magnetotransport, and this provides information about the dominant scattering mechanism in these materials. References: [1] J. Ping, I. Yudhistira, N. Ramakrishnan, S. Cho, S. Adam, M. S. Fuhrer, \textit{Phys. Rev. Lett.} \textbf{113,} 047206 (2014); [2] H. Schmidt, S. Wang, L. Chu, M. Toh, R. Kumar, W. Zhao, A. H. Castro Neto, J. Martin, S. Adam, B. \"{O}zyilmaz, and G. Eda, \textit{Nano Letters}, \textbf{14}, 1909 (2014).

Authors

  • Shaffique Adam

    Yale-NUS College, Singapore, Centre for Advanced 2D Materials and Graphene Research Centre, and Department of Physics, National University of Singapore, Yale NUS College and National University of Singapore, National University of Singapore, Yale-NUS college, Graphene Research Centre and Department of Physics, National University of Singapore, Yale-NUS College, Center for Advanced 2D materials and Graphene Research Center, and Department of Physics, National University of Singapore, Yale-NUS College and National University of Singapore

  • Indra Yudhistira

    Department of Physics, National University of Singapore and Centre for Advanced 2D Materials and Graphene Research Centre, Center for Advanced 2D materials and Graphene Research Center, and Department of Physics, National University of Singapore