Developing TiN resonators with high kinetic inductance

ORAL

Abstract

Titanium nitride (TiN) has recently become a material of interest in the superconducting resonator and quantum computing communities due to its high quality factors and high kinetic inductances. By introducing an RF-induced DC voltage bias to the substrate during growth, we have found a reliable method of sputtering superconducting TiN. With optimized bias voltage and thickness, we have fabricated resonators where the kinetic inductance is over ten times greater than the geometric inductance. We report on progress towards increasing this value while maintaining high quality factors.

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Authors

  • Peng Xu

    Laboratory for Physical Sciences, College Park, MD

  • Yaniv Rosen

    Laboratory for Physical Sciences, College Park, MD

  • Aruna Ramanayaka

    Laboratory for Physical Sciences, College Park, MD, Laboratory of Physical Sciences, College Park, MD, Laboratory for Physical Sciences

  • Bahman Sarabi

    Laboratory for Physical Sciences, College Park, MD, Laboratory for Physical Sciences

  • Jaim Iftekhar

    Laboratory for Physical Sciences, College Park, MD

  • Kevin Osborn

    Laboratory for Physical Sciences, College Park, MD, Laboratory for Physicsl Sciences, Laboratory of Physical Sciences, College Park, MD, Laboratory for Physical Sciences