Fermi level tuning and weak localization/weak antilocalization competition of bulk single crystalline Bi$_{\mathrm{2-x}}$Sb$_{\mathrm{x}}$Se$_{2}$Te compounds

In the investigation of the electrical transport properties of single crystalline Bi$_{\mathrm{2-x}}$Sb$_{\mathrm{x}}$Se$_{2}$Te (x $=$ 0.0, 0.6, 0.8, 1.0, 1.2, and 1.4) compounds, we observed a systematic change of the Fermi level from n-type metallic (x $=$ 0.0, 0.6) or small-gap semiconducting ( x $=$ 0.8) to p-type semiconducting (x $=$ 1.0) and metallic (x $=$ 1.2, 1.4), respectively, with increasing Sb-substitution concentration from the temperature-dependent electrical resistivity $\rho \left( T \right)$ and Hall resistivity $\rho_{xy} \left( T \right)$ measurements, respectively. The parent compound Bi$_{2}$Se$_{2}$Te exhibits linear negative magnetoresistance measurements at low temperatures. From the Hikamii-Larkin-Nagaoka analysis of the compounds (x $=$ 0.8 and 1.0), we found that there is a competing behavior between WL and WAL in terms of Sb-doping and magnetic field strength.