Planar Hall effect (PHE), anisotropy magnetoresistance (AMR), and anomalous Hall effect (AHE) in perpendicularly magnetized synthetic ferromagnets

Chiral spin torque driven domain wall motion (CIDWM) faster than 300 m/s along the current direction has been reported in perpendicularly magnetized atomically thin Co/Ni bilayers deposited on Pt underlayers [1], making these materials promising for DW-based memory and logic devices. Moreover, most recently even more efficiently domain motion ($\sim$ 750 m/s) by current has been observed from synthetic antiferromagnetic(SAF) racetracks with almost compensated magnetization [2]. In this talk we will present Hall measurement results from SAF Hall bars that exhibit characteristic planar Hall effect and anomalous Hall effect. We discuss the origin of these behaviors. \\[4pt] [1] Kwang-su Ryu, Luc Thomas, See-Hun Yang, S.S.P. Parkin, Nature Nanotechnology 8, 527 (2013).\\[0pt] [2] See-Hun Yang, Kwang-su Ryu,, S.S.P. Parkin, accepted in Nature Nanotechnology.